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SMD Type
MOS Field Effect Transistor 2SK3456
TO-263
Features
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
+0.2 8.7-0.2
Low on-state resistance RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A)
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
Avalanche capability ratings Surface mount package available
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 500 30 12 36 100 1.5 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =12A, VDD =400V, VGS = 10 V ID=6.0A,VGS(on)=10V,RG=10 ,VDD=150V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=500V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=6.0A VGS=10V,ID=6.0A 2.5 2.0 0.48 1620 250 10 24 18 50 15 30 9 11 0.60 pF pF pF ns ns ns ns nC nC nC Min Typ Max 10 100 3.5 Unit A A V S
5.60
1 Gate 2 Drain 3 Source
Gate voltage rating
30 V
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